OS GSO IEC 62047-9:2014

IEC 62047-9:2011
Omani Standard   Current Edition · Approved on 25 December 2014

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

OS GSO IEC 62047-9:2014 Files

English 49 Pages
Current Edition Reference Language

OS GSO IEC 62047-9:2014 Scope

This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 µm to several millimeters.

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